Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations
Brand Name:Krunter
Model Number:KES650H12A8L-2M
Moisture Sensitive:YES
Output Current:60A
Dimensions:25mm x 50mm x 10mm
Close:No Shutdown
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Location:
Dongguan China
Address:
RM 708, Building A, No.5 Keji No.2 Road, Songshan Lake, Dongguan, P.R.China
Supplier`s last login times:
within 27 hours
Product Details
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Product Details
KES650H12A8L-2M
High power density with Trench FS IGBT technology
Low VCE(sat)
Parallel operation enabled ; symmetrical design & positive temperature coefficient
Low inductance design
Integrated NTC temperature sensor
Isolated baseplate using DBC technology
Compact and robust design with molded terminals
Internal Circuit Diagram
Specification Parameters
| TYPE | VBR Volts | VGS(th) Volts | ID Amps | RDS(on) mΩ | IDSS uA | TJ | Rth(JC) K/W | Ptot Watts | Circuit | Package | Technology |
| KES400H12A8L-2M | 1200V | 3.2V | 400A | 3.7mΩ | 200uA | 175℃ | 0.064 | 2230W | 2 Pack | ECDUAL3 | SIC MOSFET |
| KES650H12A8L-2M | 1200V | 3.2V | 650A | 2.2mΩ | 200uA | 175℃ | 0.064 | 3200W | 2 Pack | SIC MOSFET |
Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations
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