Silicon Carbide Electric Heating Element Dia 8mm High Density
Brand Name:KEGU
Model Number:Customizable
Payment Terms:L/C,D/A,D/P,T/T,Western Union,MoneyGram
Place of Origin:China
Price:200-500 yuan/kg
Supply Ability:2,000 pcs/month
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Location:
Chaoyang Shaanxi China
Address:
5# Chaoyang Road,Weicheng Sub-district，Qinhan New City, Xixian New Area, Xi'an Shaanxi Province,China,712039
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within 25 hours
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Meta Description: Discover durable, economical Silicon Carbide (SiC) heating elements for extreme environments up to 1550°C. Ideal for metallurgy, ceramics, glass, and lab equipment. Learn about specs, surface loads, and how to order.
Silicon Carbide (SiC) Electric Heating Elements
Silicon Carbide (SiC) heating elements are premium non-metal electric heaters designed for extreme temperatures and harsh industrial environments. Manufactured from high-purity green silicon carbide, they are formed, siliconized, and recrystallized at high temperatures to deliver reliable, long-lasting performance. These elements are the go-to economical solution for demanding high-temperature applications.
Key Applications of SiC Heating Elements
Electronics Manufacturing
Metallurgical Processing
Aluminum & Zinc Industries
Ceramics & Porcelain Kilns
Float Glass Production
Optical Glass Manufacturing
Laboratory & Research Furnaces
Fluorescent Powder Processing
Operating Guidelines: Surface Load & Atmospheric Effects
For optimal performance and lifespan, it is crucial to operate within recommended surface load limits based on your furnace atmosphere and temperature.
Atmosphere | Max. Furnace Temp. (°C) | Max. Surface Load (W/cm²) | Effect on SiC Element |
Ammonia (NH₃) | 1290 | 3.8 | Produces methane, damaging the protective SiO₂ layer. |
Carbon Dioxide (CO₂) | 1450 | 3.1 | Corrosive to silicon carbide. |
Carbon Monoxide (CO) | 1370 | 3.8 | Carbon deposition can impair the SiO₂ layer. |
Halogen Gases | 704 | 3.8 | Highly corrosive; destroys SiO₂ layer. |
Hydrogen (H₂) | 1290 | 3.1 | Produces methane, damaging the protective SiO₂ layer. |
Nitrogen (N₂) | 1370 | 3.1 | Can form an insulating silicon nitride layer. |
Sodium Vapor | 1310 | 3.8 | Corrosive to silicon carbide. |
Silicon Dioxide | 1310 | 3.8 | Corrosive to silicon carbide. |
Oxygen / Air | 1310 | 3.8 | Oxidizes SiC (forms protective SiO₂ at correct temps). |
Water Vapor | 1090-1370 | 3.1-3.6 | Forms silicon hydrates, accelerating aging. |
Hydrocarbons | 1370 | 3.1 | Carbon pickup leads to "hot spot" failure. |
How to Order: Required Specifications
Please provide the following details for a quote or order:
Type: (e.g., Standard "U" Shape)
Outer Diameter (OD): in mm or inches.
Hot Zone Length (HZ): The heated section length.
Cold End Length (CZ): The unheated terminal section length.
Shank Spacing (A): Center-to-center distance between cold ends.
Overall Resistance: Rated resistance in ohms (Ω).
Ordering Example:
Specification: U-Type, 20mm OD, 300mm Hot Zone, 200mm Cold Ends, 60mm Shank Spacing, 1.84Ω Resistance.
Order Code:
SiC U20/300/200/60/1.84Ω
Silicon Carbide Electric Heating Element Dia 8mm High Density
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