H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
Brand Name:Infineon Technoctifier Ilogies/International ReOR
Model Number:IHW30N160R2FKSA1
Minimum Order Quantity:1 piece
Delivery Time:2~8 workdays
Payment Terms:T/T
Brand:Infineon Technologies/International Rectifier IOR
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Location:
Guangzhou Guangdong China
Address:
Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province
Supplier`s last login times:
within 47 hours
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Product Description
IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series
Applications:
• Inductive Cooking
• Soft Switching Applications
Description:
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant
Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1
| Part number | IHW30N160R2 |
Category | Discrete Semiconductor Products |
Transistors - IGBTs - Single | |
Series | TrenchStop® |
Package | Tube |
IGBT Type | NPT, Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1600 V |
Current - Collector (Ic) (Max) | 60 A |
Current - Collector Pulsed (Icm) | 90 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
Power - Max | 312 W |
Switching Energy | 4.37mJ |
Input Type | Standard |
Gate Charge | 94 nC |
Td (on/off) @ 25°C | -/525ns |
Test Condition | 600V, 30A, 10Ohm, 15V |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3-1 |
H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor
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