G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems
Model Number:G12181-003A
Minimum Order Quantity:1PCS
Delivery Time:5-8 work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
Price:Negotiable
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Shenzhen Guangdong China
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Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems
Application Areas:
- Optical Communication Systems: Detects high-speed NIR signals (1.3/1.55 μm bands) in fiber optic transceivers, supporting reliable data transmission in telecom networks.
- Precision Optical Power Meters: Serves as a core sensing component for measuring NIR optical power in laboratory testing, fiber optic maintenance, and laser calibration.
- Laser Monitoring & Testing: Enables real-time monitoring of laser output intensity (e.g., in industrial lasers, medical lasers) and life-cycle testing of laser diodes.
- Near-Infrared Photometry: Used in biochemical analysis, material science, and environmental monitoring to measure NIR light absorption, transmission, or reflection.
- Aerospace & Defense: Suitable for NIR-based target detection, remote sensing, and optical guidance systems (thanks to wide temperature range and low noise).
Key Features:
- Broad NIR Coverage: 0.9–1.7 μm spectral range aligns with key wavelengths for communication, laser, and photometry applications.
- Ultra-Low Dark Current: Max. 0.3 nA dark current minimizes background noise, ensuring high signal-to-noise ratio (SNR) for low-light detection.
- High-Speed Response: 800 MHz cut-off frequency supports fast signal detection, ideal for high-bandwidth optical communication or pulsed laser monitoring.
- Compact & Durable Package: TO-18 metal package offers mechanical stability, easy integration into circuits, and compatibility with standard optical mounts.
- Consistent Sensitivity: Low temperature coefficient of sensitivity ensures reliable performance across varying ambient temperatures.
Parameter | Specification (Typ. / Max.) | Test Conditions |
|---|---|---|
| Photosensitive Area | φ0.3 mm | - |
| Number of Sensing Elements | 1 (Single-Element) | - |
| Cooling Method | Non-cooled (Passive Ambient Cooling) | - |
| Spectral Response Range | 0.9 – 1.7 μm | Covers critical NIR bands (e.g., 1.3/1.55 μm for telecom) |
| Peak Sensitivity Wavelength | ~1.55 μm | - |
| Photosensitivity | Typ. 1.1 A/W | λ = 1.55 μm, Reverse Voltage (Vᵣ) = 5V, Tₐ = 25℃ |
| Dark Current | Max. 0.3 nA | Vᵣ = 5V, Tₐ = 25℃, No Incident Light |
| Cut-off Frequency (-3dB) | Typ. 800 MHz | Vᵣ = 5V, Load Resistance (Rₗ) = 50Ω, λ = 1.3 μm |
| Junction Capacitance | Typ. 4 pF | Vᵣ = 5V, Frequency (f) = 1 MHz |
| Noise Equivalent Power (NEP) | Typ. 3.5×10⁻¹⁵ W/Hz¹/² | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Detectivity (D*) | Typ. 7.2×10¹² cm·Hz¹/²/W | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Shunt Resistance | 300 – 1200 MΩ | Vᵣ = 0V, Tₐ = 25℃, No Light |
| Maximum Reverse Voltage (Vᵣₘₐₓ) | 20 V | Tₐ = 25℃ |
| Operating Temperature Range | -40℃ – 100℃ | Stable performance in harsh industrial environments |
| Storage Temperature Range | -55℃ – 125℃ | - |
| Temperature Coefficient of Sensitivity | 1.08 times/℃ | Relative to 25℃, λ = 1.55 μm |
G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems
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