Product Details
G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode)
For Laser Monitoring Systems
1. Application Areas:
- Laser Monitoring Systems: Enables real-time detection and
monitoring of laser output intensity in industrial laser
processing, medical laser equipment, and research-grade laser
setups, ensuring stable laser performance.
- Optical Power Meters: Serves as a core sensing component in optical
power measurement devices, accurately capturing near-infrared (NIR)
optical power signals for applications like fiber optic testing and
laboratory photometry.
- Laser Diode Life-Cycle Testing: Withstands long-term operation and
maintains consistent responsiveness, making it suitable for
evaluating the durability and performance degradation of laser
diodes over their service life.
- Near-Infrared (NIR) Photometry: Facilitates precise measurement of
NIR light absorption, transmission, or reflection in fields such as
biochemical analysis, material science, and environmental
monitoring.
- Optical Communication Systems: Detects high-speed NIR optical
signals (e.g., in 1.3 μm or 1.55 μm wavelength bands) for use in
fiber optic communication transceivers, ensuring reliable data
transmission in telecom networks.
2. Key Features:
- Broad NIR Spectral Response: Operates across a wavelength range of
0.9–1.7 μm, covering critical bands for optical communications,
laser applications, and NIR photometry.
- High Sensitivity: Delivers a typical photosensitivity of 1.1 A/W
(at peak wavelength ~1.55 μm), enabling accurate detection of
low-intensity NIR optical signals.
- Low Dark Current: Features a maximum dark current of 0.5 nA (under
reverse voltage VR = 5V), minimizing background noise and improving
signal-to-noise ratio (SNR) for precise measurements.
- High-Speed Performance: Boasts a typical cut-off frequency of 600
MHz, supporting high-speed signal detection for applications like
fast optical communication or laser pulse monitoring.
- Compact & Robust Package: Housed in a TO-18 package (a standard,
compact metal package), ensuring mechanical stability, easy
integration into circuit designs, and compatibility with standard
optical mounting setups.
- Wide Operating Temperature Range: Functions reliably in
temperatures from -40°C to 100°C, making it suitable for harsh
industrial environments or outdoor applications.
- Low Junction Capacitance: Has a typical junction capacitance of 5
pF (VR = 5V), reducing signal distortion and enhancing
high-frequency performance.
Sensor Type | InGaAs PIN Photodiode | - |
Package Type | TO-18 | - |
Operation Mode | Photoconductive | - |
Photosensitive Area Diameter | φ0.3 mm | - |
Number of Elements | 1 | - |
Cooling Method | Non-cooled | - |
Spectral Response Range | 0.9 – 1.7 μm | - |
Peak Sensitivity Wavelength | ~1.55 μm | - |
Photosensitivity | Typ. 1.1 A/W | λ = 1.55 μm, Vₐ = 5V |
Dark Current | Max. 0.5 nA | Vᵣ = 5V, Tₐ = 25℃, No light |
Cut-off Frequency (-3dB) | Typ. 600 MHz | Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm |
Junction Capacitance | Typ. 5 pF | Vᵣ = 5V, f = 1 MHz |
Noise Equivalent Power (NEP) | Typ. 4.2×10⁻¹⁵ W/Hz¹/² | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
Detectivity (D*) | Typ. 6.3×10¹² cm·Hz¹/²/W | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
Shunt Resistance | 200 – 1000 MΩ | Vᵣ = 0V, Tₐ = 25℃, No light |
Maximum Reverse Voltage (Vᵣₘₐₓ) | 20 V | Tₐ = 25℃ |
Window Material | Borosilicate Glass | - |
Operating Temperature Range | -40℃ – 100℃ | - |
Storage Temperature Range | -55℃ – 125℃ | - |
Temperature Coefficient of Sensitivity | 1.09 times/℃ | |
Company Profile
Yijiajie Electronics is a full range of silicon pressure sensors
from the United States, FREESCALE/, GE, MEAS, SMI, and a full range
of sensing and control products from the United States pressure,
temperature and humidity, gas flow, current, Hall effect, etc.,
Japan HAMAMATSU flame, UV sensors, photodiodes, Japan FIGARO, UK
CITY, ALPHASENSE full range of semiconductors, catalytic,
electrochemical gas sensors, French HUMIREL/MEAS humidity sensors
and other international well-known companies authorized agents or
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