G12180-010A Low Junction Capacitance InGaAs PIN Photodiodes with Sensitivity Wavelength Range of 0.9 to 1.7 μm and Metal Encapsulation

Model Number:G12180-010A
Minimum Order Quantity:1
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
Supply Ability:5000pcs
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Location: Shenzhen Guangdong China
Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Supplier`s last login times: within 26 hours
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Product Details

InGaAs PIN photodiodes G12180-010A

Receiving surface: φ1 mm


Features:
- Low noise, low dark current
- Low junction capacitance
- Light receiving surface: φ1 mm
- Low noise

Maximum Sensitivity Wavelength (Typical)1.55 μm
Light sensitivity (typical)1.1 A/W
Dark current (max)4 nA
Cut-off Frequency (typical)60 MHz
Junction Capacitance (typical)55 pF
Noise equivalent power (typical)1.4×10-14 W/Hz1/2
Sensitivity wavelength range0.9 to 1.7 μm
CoolingNon-cooled

China G12180-010A Low Junction Capacitance InGaAs PIN Photodiodes with Sensitivity Wavelength Range of 0.9 to 1.7 μm and Metal Encapsulation supplier

G12180-010A Low Junction Capacitance InGaAs PIN Photodiodes with Sensitivity Wavelength Range of 0.9 to 1.7 μm and Metal Encapsulation

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