G12180-005A PIN Photodiode Low Dark Current Large Photosensitive Area
Brand Name:Hamamatsu
Model Number:G12180-005A
Minimum Order Quantity:1
Delivery Time:3-5workingdays
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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within 26 hours
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G12180-005A PIN Photodiode Low Dark Current Large Photosensitive Area
InGaAs PIN photodiodes have large shunt resistance and feature very
low noise. Hamamatsu provides various types of
InGaAs PIN photodiodes with photosensitive area from t0.3 mm to $5
mm.
Features
1. Low noise, low dark current
2. Low terminal capacitance
3. Large photosensitive area
4. Various photosensitive area sizes available
Applications
1. Laser monitors
2. Optical power meters
3. Laser diode life test
4. NIR (near infrared) photometry
5. 0ptical communications
| Photosensitive area | φ0.5 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18 |
| Cooling | Uncooled |
| Spectral response range | 0.9 to 1.7 μm |
| Peak sensitivity wavelength (typical) | 1.55 μm |
| Sensitivity (typical) | 1.1 A/W |
| Dark current (maximum) | 0.75 nA |
| Cut-off frequency (typical) | 200 MHz |
G12180-005A PIN Photodiode Low Dark Current Large Photosensitive Area
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