YJJ S1337-33BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Brand Name:HAMAMATSU
Model Number:S1337-33BR
Minimum Order Quantity:1
Delivery Time:3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location: Shenzhen Guangdong China
Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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Product Description:

S1337-33BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands


Features:

Suitable for precise photometry in ultraviolet to infrared bands

Receiving surface 2.4 × 2.4 mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 340 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.62 A/W

Dark current (Max.) 100 pA

Rise time (typical value) 1 μs

Junction capacitance (typical) 380 pF

Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated


Specifications:

Spectral response range340 to 1100 nm
Maximum sensitivity wavelength (typical value)960 nm
Photosensitivity (typical value)0.5A /W
Dark current (Max.)100 pA


China YJJ S1337-33BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands supplier

YJJ S1337-33BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

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