YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

Brand Name:HAMAMATSU
Model Number:S12060-10
Minimum Order Quantity:1
Delivery Time:3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location: Shenzhen Guangdong China
Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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Product Description:

S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band


Features:

Low temperature coefficient for 800 nm band


This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics).


peculiarity

- Breakdown voltage temperature coefficient: 0.4V /°C

- High speed response

- High sensitivity and low noise

Type Near infrared type

(Low temperature coefficient)

Receiving surface φ1mm

Encapsulation metal

Package category TO-18

Maximum sensitivity wavelength (typical value) 800 nm

Sensitivity wavelength range 400 to 1000 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 2 nA

Cut-off frequency (typical value) 600 MHz

Junction capacitance (typical) 6 pF

Breakdown voltage (typical value) 200 V

Breakdown voltage temperature coefficient (typical value) 0.4 V/°C

Gain rate (typical value) 100

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 800 nm, M = 1


Specifications:

Reverse voltage (Max.)5 V
Spectral response range400 to 1000 nm
Maximum sensitivity wavelength (typical value)800 nm
Photosensitivity (typical value)0.5A /W


China YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band supplier

YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

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