YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode

Brand Name:HAMAMATSU
Model Number:G12180-010A
Minimum Order Quantity:1
Delivery Time:3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location: Shenzhen Guangdong China
Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Supplier`s last login times: within 26 hours
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Product Details

Product Description:

G12180-010A Indium Gallium Arsenic PIN Photodiode


Features:

peculiarity

- Low noise, low dark current

- Low junction capacitance

- Receiving surface: φ1mm

- Low noise

Receiving surface φ1.0mm

Number of pixels 1

Encapsulation metal

Package category TO-18

Heat dissipation uncooled type

Sensitivity wavelength range 0.9 to 1.7 μm

Maximum sensitivity wavelength (typical value) 1.55 μm

Photosensitivity (typical value) 1.1 A/W

Dark current (Max.) 4 nA

Cut-off frequency (typical value) 60 MHz

Junction capacitance (typical) 55 pF

Noise equivalent power (typical value) 1.4×10-14 W/Hz1/2

Typical value of measurement conditions Tc = 25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 5V, cutoff frequency: VR = 5V, RL = 50Ω, -3 dB, junction capacitance: VR = 5V, f = 1MHz


Specifications:

CoolinUncooled
Spectral response range0.9 to 1.7 μm
Peak wavelength (typical value)1.55 μm
Light sensitivity (typical value)0.9A /W


China YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode supplier

YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode

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