S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
Brand Name:Hamamatsu
Model Number:S1337-33BQ
Minimum Order Quantity:1
Delivery Time:3-5workingdays
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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Product Details
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
These Si photodiodes have sensitivity in the Uv to near IR range.
They are suitable for low-light-level detection in analysis
and the like.
Features
High uv sensitivity:QE75%(=200 nm)
Low capacitance
Applications
Analytical equipment
Optical measurement eguipment
Specification:
Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 30 pA |
| Rise time (typ.) | 0.2 μs |
| Terminal capacitance (typ.) | 65 pF |
| Noise equivalent power (typ.) | 8.1×10-15 W/Hz1/2 |
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
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