Silicon S16765 01MS Infrared Photoelectric Sensor Replace S1133

Brand Name:YJJ
Model Number:S16765-01MS
Minimum Order Quantity:5
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location: Shenzhen Guangdong China
Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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Silicon S16765 01MS Infrared Photoelectric Sensor Replace S1133


Photodiode PIN silicon photocell S16765-01MS can completely replace S1133


Features:

Hamamatsu photosensitive photodiode silicon photocell

High performance, High reliability Si PIN photodiodes

High performance, high reliability silicon PIN photodiode

Parameter name value

Encapsulated ceramic

Sensitive zone diameter/length mm 2.8

The minimum wavelength is 320 nm

The maximum wavelength is 730 nm

The peak wavelength is 560 nm

Peak sensitivity A/W 0.3

Maximum dark current (nA) 0.01

Rsh Ω (G) 100

TR (us) 2.5

CT (pF) 700

Part of the photodetector covers common photodiodes, avalanche diodes, and photomultiplier tubes that form from x-rays to ultraviolet, visible light

, near infrared, up to 3000nm in the middle infrared band;Package form from Chip Level to Components Level, Module

Level of various semiconductor laser diodes

Professional sales of Japan hamamatsu optoelectronic devices, optical reception, silicon photodiode, photoelectric detection devices optical detection components


Specifications:

Welding temperature260℃
Light source power0.1u~100mW/cm²
Spectral detection range25℃, 10% of R
Reverse voltage3V

China Silicon S16765 01MS Infrared Photoelectric Sensor Replace S1133 supplier

Silicon S16765 01MS Infrared Photoelectric Sensor Replace S1133

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