S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode
Brand Name:YJJ
Model Number:S6931-01
Minimum Order Quantity:5
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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Product Details
S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode
S6931-01 Is Molded Into A Silicon Photodiode Enclosed In Transparent Plastic
Features:
Detailed parameter
Receiving surface 2.4 × 2.8mm
The pixel number is 1
Packaging plastics
Cooling non-cooling type
Reverse voltage (Max.) 10 V
Sensitivity wavelength range 320 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.48A /W
Dark current (Max.) 20 pA
Rise time (typical value) 0.5μs
Junction capacitance (typical value) 200 pF
Typical values Ta=25°C, sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Dark current (Max.) | 10V |
| Operating temperature | Topr |
| Storage temperature | Tstg |
| Center wavelength | CWL |
| Photosensitivity | λ=254 nm |
S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode
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