UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation
Brand Name:YJJ
Model Number:GS-AB-S
Minimum Order Quantity:5
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:CHINA
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Supplier`s last login times:
within 26 hours
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Product Details
Product Description:
GS-AB-S GaN-based UV photodiode
Features:
Broad band UVA+UVB+UVC photodiode
Photovoltaic mode operation
TO-46metal housing
Good visible blindness
High responsivity and low dark current
UV index monitoring, UV radiation dose measurement, flame detection
Specification
| Parameters | Symbol | Value | Unit |
| Maximum ratings | |||
| Operation temperature range | Topt | -25-85 | oC |
| Storage temperature range | Tsto | -40-85 | oC |
| Soldering temperature (3 s) | Tsol | 260 | oC |
| Reverse voltage | Vr-max | -10 | V |
| General characteristics (25 oC) | |||
| Chip size | A | 1 | mm2 |
| Dark current (Vr = -1 V) | Id | <1 | nA |
| Temperature coefficient (@265 nm) | Tc | 0.05 | %/ oC |
| Capacitance (at 0 V and 1 MHz) | Cp | 18 | pF |
| Spectral response characteristics (25 oC) | |||
| Wavelength of peak responsivity | λ p | 355 | nm |
| Peak responsivity (at 355 nm) | Rmax | 0.20 | A/W |
| Spectral response range (R=0.1×Rmax) | - | 210-370 | nm |
| UV-visible rejection ratio (Rmax/R400 nm) | - | >104 | - |
Specifications:
| Specifications | Parameters |
| Peak wavelength | 355NM |
| Light sensitivity | 0.20A/W |
| Rise time | 3US |
| Test conditions | typical values, Ta=25° |
UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation
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