S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current
Brand Name:Hamamatsu
Model Number:S2386-8K
Minimum Order Quantity:1
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Supplier`s last login times:
within 26 hours
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Product Description:
S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current
Features:
Suitable for visible light to near infrared band, universal photometric determination
Product features
● High sensitivity in visible to near infrared band
● Low dark current
● High reliability
● High linearity
Rise time (typical value). 10 mu s
Junction capacitance (typical value) 4300 pF
Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| spectral response range is | 320 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.6 A/W |
| Dark current (Max.) | 50 pA |
S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current
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