S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Brand Name:Hamamatsu
Model Number:S1226-8BQ
Minimum Order Quantity:1
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Supplier`s last login times:
within 26 hours
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Product Description:
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Features:
● High UV sensitivity: QE = 75% (λ=200 nm)
● Suppress NIR sensitivity
● Low dark current
● High reliability
Dark current (maximum) 20 pA
Rise time (typical value). 2 mu s
Junction capacitance (typical value) 1200 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 5V |
| spectral response range is | 190 to 1000 nm |
| peak sensitivity wavelength (typical value) was | 720 nm |
| Type | infrared photoelectricity |
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
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