S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band
Brand Name:Hamamatsu
Model Number:S1337-66BQ
Minimum Order Quantity:1
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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Product Description:
S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band
Features:
Suitable for precise photometric determination from ultraviolet to infrared band
High UV sensitivity: QE = 75% (λ=200 nm)
Low capacitance
Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.5 A/W |
| Dark current (maximum) | 100 pA |
| Rise time (typical value) | 1 mu s |
| Junction capacitance (typical value) | 380 pF |
S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band
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