G8370-81 Infrared Photoelectric Sensor Low PDL , InGaAs PIN Photodiode
Brand Name:Hamamatsu
Model Number:G8370-81
Minimum Order Quantity:1
Delivery Time:3-5work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Japan
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Supplier`s last login times:
within 26 hours
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Product Details
Product Description:
G8370-81 InGaAs PIN Photodiode Low PDL(Polarization Dependent Loss)
Features:
Low PDL(polarization dependent loss)
InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.
Product features
Low PDL(polarization dependent loss)
● Low noise, low dark current
● Large photographic area
● Photosensitive area: φ1 mm
Noise equivalent power (typical value) 2×10-14 W/ hz1/2
Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted
Specifications:
| peak sensitivity wavelength (typical value) was | 1.55 μm |
| Sensitivity (typical value) | 1.1 A/W |
| Dark current (maximum) | 5 nA |
| Cutoff frequency (typical value) | 35 MHz |
| Junction capacitance (typical value) | 90 pF |
| Noise equivalent power (typical value) | 2×10-14 W/ hz1/2 |
G8370-81 Infrared Photoelectric Sensor Low PDL , InGaAs PIN Photodiode
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