IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W
Brand Name:original
Model Number:IRLML6401TRPBF
Minimum Order Quantity:discussible
Delivery Time:1-7work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Price:discussible
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Shenzhen Guangdong China
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NEW AND ORIGNAL IRLML6401 N-Channel MOSFET SOT23-3 IRLML6401TRPBF
Products Description:
MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V
Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R
Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W
These P-Channel MOSFETs from International Rectifier utilize
advancedprocessing techniques to achieve extremely low
on-resistance per silicon area.This benefit, combined with the fast
switching speed and ruggedized devicedesign that HEXFET® power
MOSFETs are well known for, provides thedesigner with an extremely
efficient and reliable device for use in battery andload
management.A thermally enhanced large pad leadframe has been
incorporated into thestandard SOT-23 package to produce a HEXFET
Power MOSFET with theindustry's smallest footprint. This package,
dubbed the Micro3™, is ideal forapplications where printed circuit
board space is at a premium. The low profile(<1.1mm) of the
Micro3 allows it to fit easily into extremely thin
applicationenvironments such as portable electronics and PCMCIA
cards. The thermalresistance and power dissipation are the best
available
Technological Parameters:
| Threshold voltage | 550 mV |
| input capacitance | 830 pF |
| Rated power | 1.3 W |
| polarity | P-Channel |
| Installation method | Surface Mount |
| pin number | 3 |
| package | SOT-23-3 |
| Operating temperature | -55℃ ~ 150℃ (TJ) |
| Packaging | Tape & Reel (TR) |
| Manufacturing applications | DC Switches |
IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W
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