P3A8GL4BLF-GJN Memory IC Chip DDR4 8Gb SDRAM Memory BGA Package

Brand Name:Original Factory
Certification:Lead free / RoHS Compliant
Model Number:P3A8GL4BLF-GJN
Minimum Order Quantity:10
Delivery Time:5-8 work days
Payment Terms:T/T,L/C,Western Union
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Location: Shenzhen China
Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
Supplier`s last login times: within 34 hours
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Product Details

P3A8GL4BLF-GJN Memory IC Chip DDR4 8Gb SDRAM Memory BGA Package


Product Description Of P3A8GL4BLF-GJN
P3A8GL4BLF-GJN is DDR4 8Gb SDRAM Memory in BGA package.

DDR4 memory chips offer higher frequencies, lower voltages and greater capacities, delivering enhanced performance and increased data transfer rates.


Features Of P3A8GL4BLF-GJN
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
DRAM Access Bandwidth
- Separated I0 gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
Signal Synchronization
- Write Leveling via MR settings1
- Read Leveling via MPR
Reliability & Error Handling
- Command/Address Parity
- Databus Write CRC
- MPR readout
- Boundary Scan (X16)
- Post Package Repair
Signal Integrity
- Interal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Addressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240Ω ± 1%)
Power Saving & Efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low-power Auto Self Refresh (LPASR)


Programmable Functions Of P3A8GL4BLF-GJN
Output Driver Impedance (34/48)
CAS Write Latency (9/10/11/12/14/16/18/20)
Additive Latency (0/CL-1/CL-2)
CS to Command Address Latency (3/4/5/6/8)
Command Address Parity Latency (4/5/6)
Write Recovery Time (10/12/14/16/18/20/24)
Burst Type (Sequential/Interleaved)
RTT_PARK (34/40/48/60/80/120/240)
RTT_NOM (34/40/48/60/80/120/240)
RTT_WR (80/120/240)
Read Preamble (1T/2T)
Write Preamble (1T/2T)
Burst Length (BL8/BC4/BC4 or 8 on the fly)
LPASR (Manual: Normal/Reduced/Extended, Auto:TS)


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LMK60E0-156M25SIAR

QFM-6

LMK60E0-212M50SIAR

QFM-6

LMK61E0-050M00SIAR

QFM-6

TPL5010QDDCRQ1

SOT-23-6

LMK60E0-156257SIAR

QFM-6

LMK61E2-125M00SIAR

QFM-6

F28P659DK8PTPQ1

HLQFP-176

F28P659DK8PZPQ1

HTQFP-100

F28P659DK8ZEJQ1

NFBGA-256

F28P659DK8ZEJRQ1

NFBGA-256

ADC12DL500ACF

FCBGA-256

ADC12DL2500ACF

FCBGA-256

ADC12DL1500ACF

FCBGA-256

ADS1288IRHBR

VQFN-32

AFE78101RRUR

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AFE781H1RRUR

UQFN-24


FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

China P3A8GL4BLF-GJN Memory IC Chip DDR4 8Gb SDRAM Memory BGA Package supplier

P3A8GL4BLF-GJN Memory IC Chip DDR4 8Gb SDRAM Memory BGA Package

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