MT61K512M32KPA-14C:B Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory

Brand Name:Original Factory
Certification:Lead free / RoHS Compliant
Model Number:MT61K512M32KPA-14C:B
Minimum Order Quantity:10
Delivery Time:5-8 work days
Payment Terms:T/T, L/C, Western Union
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Location: Shenzhen China
Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
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Product Details

MT61K512M32KPA-14C:B Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory


Product Description Of MT61K512M32KPA-14C:B

MT61K512M32KPA-14C:B GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory and contains 17,179,869,184 bits.

MT61K512M32KPA-14C:B——The GDDR6 SGRAM’s high-speed interface is optimized for point-to-point connections to a host controller. On-die termination (ODT) is provided for all high-speed interface signals to eliminate the need for termination resistors in the system.


Specification Of MT61K512M32KPA-14C:B

Part Number:MT61K512M32KPA-14C:B
SGRAM - GDDR6
16 Gbit
32 bit
1.5 GHz
FBGA-180
512 M x 32
1.3095 V
1.3905 V
0 ℃
+ 95 ℃


Features Of MT61K512M32KPA-14C:B

• VDD = VDDQ = 1.35V ±3% and 1.25V ±3%
• VPP = 1.8V –3%/+6%
• Data rate: 14 Gb/s, 16 Gb/s
• 2 separate independent channels (x16)
• x16/x8 and 2-channel/pseudo channel (PC) mode configurations set at reset
• Single ended interfaces per channel for command/address (CA) and data
• Differential clock input CK_t/CK_c for CA per 2 channels
• Two differential clock inputs WCK_t/WCK_c per channel for data (DQ, DBI_n, EDC)
• Programmable READ latency
• Programmable WRITE latency
• Read/write data transmission integrity secured by cyclic redundancy check
• Programmable CRC READ latency
• Programmable CRC WRITE latency
• Programmable EDC hold pattern for CDR
• RDQS mode on EDC pins
• Low power modes
• On‐chip temperature sensor with read‐out
• Auto precharge option for each burst access
• Auto refresh mode (32ms, 16k cycles) with per-bank and per-2-bank refresh options
• 180-ball BGA package
• Lead-free (RoHS-compliant) and halogen-free packaging
• TC = 0°C to +95°C


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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

China MT61K512M32KPA-14C:B Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory supplier

MT61K512M32KPA-14C:B Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory

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