MOSFET Semiconductor Detector Systems Atomic Layer Deposition Equipment ISO
Brand Name:ZEIT
Certification:Case by case
Model Number:ALD-SEM-X—X
Minimum Order Quantity:1set
Delivery Time:Case by case
Payment Terms:T/T
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Chengdu Sichuan China
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CSCES strait screen and core intelligent manufacturing base，Shuangliu District，Chengdu City, Sichuan Province, P. R. China
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Product Details
Company Profile
Product Details
Atomic Layer Deposition in Semiconductor Industry
Applications
| Applications | Specific Purpose |
| Semiconductor | Logic device (MOSFET), High-K gate dielectrics / gate electrode |
High-K capacitive material / capacitive electrode of Dynamic Random
Access | |
Metal interconnection layer, metal passivation layer, metal seed
crystal layer, metal | |
Non-volatile memory:flash memory, phase change memory, resistive
random access |
Working Principle
Atomic layer deposition (ALD) technology, also known as atomic
layer epitaxy (ALE) technology, is a chemical
vapor film deposition technology based on ordered and surface self-saturated reaction. ALD is applied in
semiconductor field. As Moore’s Law evolves constantly and the feature sizes and etching grooves of integrated
circuits have been constantly miniaturizing, the smaller and smaller etching grooves have been bringing severe
challenges to the coating technology of grooves and their side walls.Traditional PVD and CVD process have been
unable to meet the requirements of superior step coverage under narrow line-width. ALD technology is playing an
increasingly important role in semiconductor industry due to its excellent shape-keeping, uniformity and higher step
coverage.
Features
| Model | ALD-SEM-X—X |
| Coating film system | AL2O3, TiO2, ZnO, etc |
| Coating temperature range | Normal temperature to 500℃ (Customizable) |
| Coating vacuum chamber size | Inner diameter: 1200mm, Height: 500mm (Customizable) |
| Vacuum chamber structure | According to customer’s requirements |
| Background vacuum | <5×10-7mbar |
| Coating thickness | ≥0.15nm |
| Thickness control precision | ±0.1nm |
| Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
| Film thickness uniformity | ≤±0.5% |
| Precursor and carrier gas | Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure
water, |
| Note: Customized production available. | |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and
rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in
sequence and without simultaneous reaction.
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to
standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking
conditions are met.
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MOSFET Semiconductor Detector Systems Atomic Layer Deposition Equipment ISO
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