PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor
Model Number:PIMN31
Minimum Order Quantity:3000 PCS
Delivery Time:STOCK
Payment Terms:T/T, Western Union ， ESCROW
Place of Origin:Malaysia
Price:Negotiation
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Shenzhen China
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V
Description :
The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT
family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49291.
The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies
where low conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids,
relays and contactors. Formerly Developmental Type TA49303.
Features :
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . .340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor
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