Note:This product is designed for protection against electrostatic
discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
For detail information, please contact to our sales.
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even
if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and
individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ)
Note 3: According to IEC61000-4-5.
Note 1: Based on IEC61000-4-5 8/20µs pulse.
Note 2: TLP parameter: Z0 = 50Ω, tp = 100 ns, tr = 300 ps,
averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP
characteristics at IPP between 8 A to 16 A.
Note 3: Guaranteed by design.