MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Certification:new & original
Model Number:MGW12N120D
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate

IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

RatingSymbolValueUnit
Collector–Emitter VoltageVCES1200Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)VCGR1200Vdc
Gate–Emitter Voltage — ContinuousVGE± 20Vdc

Collector Current — Continuous @ TC = 25°C

— Continuous @ TC = 90°C

— Repetitive Pulsed Current (1)

IC25

IC90

ICM

20

12

40

Vdc


Apk

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

125

0.98

Watts

W/°C

Operating and Storage Junction Temperature RangeTJ, Tstg–55 to 150°C

Short Circuit Withstand Time

(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

tsc10μs

Thermal Resistance — Junction to Case – IGBT

— Junction to Case – Diode

— Junction to Ambient

RθJC

RθJC

RθJA

1.0

1.4

45

°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 secondsTL260°C
Mounting Torque, 6–32 or M3 screw10 lbf*in (1.13 N*m)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

PACKAGE DIMENSIONS



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China MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode supplier

MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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