2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor
Certification:new & original
Model Number:2N3906
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location:
Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times:
within 48 hours
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Product Details
PNP switching transistor 2N3906
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching in industrial applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic package. NPN
complement: 2N3904.
PINNING
| PIN | DESCRIPTION |
| 1 | collector |
| 2 | base |
| 3 | emitter |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | −40 | V |
| VCEO | collector-emitter voltage | open base | − | −40 | V |
| VEBO | emitter-base voltage | open collector | − | −6 | V |
| IC | collector current (DC) | − | −200 | mA | |
| ICM | peak collector current | − | −300 | mA | |
| IBM | peak base current | − | −100 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 °C | − | 500 | mW |
| Tstg | storage temperature | −65 | +150 | °C | |
| Tj | junction temperature | − | 150 | °C | |
| Tamb | operating ambient temperature | −65 | +150 | °C |
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
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2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor
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