TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

Brand Name:VISHAY
Certification:Original Factory Pack
Model Number:TSML1020
Minimum Order Quantity:20pcs
Delivery Time:1 Day
Payment Terms:T/T, Western Union,PayPal
Contact Now

Add to Cart

Active Member
Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times: within 48 hours
Product Details Company Profile
Product Details

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs


Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak waveleCM GROUPh λp = 950 nm
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component

Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.

This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability

Typical Characteristics (Tamb = 25 °C unless otherwise specified)


STOCK LIST

DLW21HN900SQ2L7950MURATA16+SMD
FAN5331SX1950FSC15+SOT23-5
AD5160BRJZ50-RL72450AD15+SOT23-8
DTC114ESA3450ROHM16+TO-92S
HT7130-12460HOLTEK13+SOT-89
ATMEGA16-16AU2500ATMEL15+QFP-44
74HCT04D750015+SOP
26PCAFA6D3000HONEYWELL15+SIP
ATMEGA168PA-AU2500ATMEL16+QFP
BYT230PIV-400900ST15+SOP
74F827N750016+DIP
BC817-161500015+SOT-23
AD711JN2450AD15+DIP
DS9034PCX4350DALLAS16+PCB
DAC08Q1825AD15+DIP-16
CY8C27543-24AXI2500CYPRESS16+QFP44
AOZ1031AI1600AOS15+SOP-8
ATMEGA8515-16AU2500ATMEL15+QFP-44
74LVC373APW750015+TSSOP
INA114BU1780TI16+SOP-16
BZV55-C36900015+LL34
BC63915000FSC15+TO-92``
China TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs 	Rectifier Diode supplier

TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

Inquiry Cart 0