BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

Certification:new & original
Model Number:BFG135
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

BFG135

NPN 7GHz wideband transistor


DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.


LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VCBOcollector-base voltageopen emitter-25V
VCEOcollector-emitter voltageopen base-15V
VEBOemitter-base voltageopen collector-2V
ICDC collector current-150mA
Ptottotal power dissipationup to Ts = 145 °C (note 1)-1W
Tstgstorage temperature-65155°C
Tjjunction temperature-175°C

Note 1. Ts is the temperature at the soldering point of the collector tab.


PINNING

PINDESCRIPTION
1emitter
2base
3emitter
4collector

Intermodulation distortion and second order intermodulation distortion test circuit.


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China BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor supplier

BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

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