200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

Certification:new & original
Model Number:IRFP260NPBF
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

IRFP260NPbF HEXFET® Power MOSFET


• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Ease of Paralleling

• Simple Drive Requirements

• Lead-Free


Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.



Absolute Maximum Ratings

ParameterMax.Units
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V50A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V35A
IDMPulsed Drain Current200A
PD @TC = 25°CPower Dissipation300A
Linear Derating Factor2.0W/°C
VGSGate-to-Source Voltage±20V
EASSingle Pulse Avalanche Energy560mJ
IARAvalanche Current50A
EARRepetitive Avalanche Energy30mJ
dv/dtPeak Diode Recovery dv/dt10V/ns
TJ, TSTGOperating Junction and Storage Temperature Range-55 to +175°C
Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew10 lbfïin (1.1Nïm)

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China 200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF supplier

200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

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