FQP50N06 Power Mosfet Transistor npn general purpose transistor

Certification:new & original
Model Number:FQP50N06
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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FQP50N06L

60V LOGIC N-Channel MOSFET


General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.


Features

• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V

• Low gate charge ( typical 24.5 nC)

• Low Crss ( typical 90 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating


Absolute Maximum Ratings TC = 25°C unless otherwise noted

SymbolParameterFQP50N06LUnits
VDSSDrain-Source Voltage60V
ID

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

52.4A
37.1A
IDMDrain Current - Pulsed (Note 1)210A
VGSSGate-Source Voltage± 20V
EASSingle Pulsed Avalanche Energy (Note 2)990mJ
IARAvalanche Current (Note 1)52.4A
EARRepetitive Avalanche Energy (Note 1)12.1mJ
dv/dtPeak Diode Recovery dv/dt (Note 3)7.0V/ns
PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

121W
0.81W/°C
TJ, TSTGOperating and Storage Temperature Range-55 to +175°C
TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds300°C

Package Dimensions

TO-220


China FQP50N06 Power Mosfet Transistor npn general purpose transistor supplier

FQP50N06 Power Mosfet Transistor npn general purpose transistor

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