BC807-25 Power Mosfet Transistor PNP general purpose transistor
Certification:new & original
Model Number:BC807-25
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location:
Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times:
within 48 hours
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| Part no. | Quantity | Brand | D/C | Package |
| 5M0380R | 2882 | FSC | 14+ | TO-220 |
| AT24C04 | 2882 | ATMEL | 14+ | SOP8 |
| HT1381 | 2882 | HOLTEK | 14+ | SOP8 |
| L293E | 2887 | ST | 16+ | DIP |
| BZX84B5V1 | 2888 | ON | 16+ | SOT-23 |
| TLP523-4 | 2888 | TOSHIBA | 13+ | DIP-16 |
| TPS63020DSJR | 2888 | TI | 15+ | QFN |
| KBP210 | 2896 | SEP | 16+ | DIP |
| MP1542DK-LF-Z | 2900 | MPS | 16+ | MSOP8 |
| STU3030 | 2900 | SAMHOP | 14+ | TO-252 |
| IRS2092S | 2978 | IR | 14+ | SOP16 |
| SMBJ36A | 2980 | VISHAY | 14+ | DO-214AA |
| A6259 | 2988 | SANKEN | 16+ | DIP |
| IRF7309TRPBF | 2990 | IR | 16+ | SOP8 |
| PIC16F877-20I/L | 2990 | MICROCHIP | 13+ | PLCC44 |
| IRFBE30P | 2997 | IR | 15+ | TO-220 |
| MUR1640CT | 2998 | ON | 16+ | TO-220 |
| 1.5KE15A | 3000 | VISHAY | 16+ | DO-201AD |
| 1.5KE6.8CA | 3000 | VISHAY | 14+ | DO-201AD |
| 1N5359B | 3000 | ON | 14+ | DO-27 |
| 1N5819HW-7-F | 3000 | DIODES | 14+ | SOD-123 |
| 2N7002W-7-F | 3000 | DIODES | 16+ | SOT-323 |
| 74HC1G04GW | 3000 | 16+ | SOT-353 | |
| BD136 | 3000 | ST | 13+ | TO-126 |
| BF620 | 3000 | 15+ | SOT-89 | |
| BZD27C13 | 3000 | VISHAY | 16+ | SOD123 |
| BZX84-C12 | 3000 | 16+ | SOT23 | |
| CAT810LTBI | 3000 | ON | 14+ | SOT23-3 |
| DF01S | 3000 | VISHAY | 14+ | SOP4 |
| DTC124EU | 3000 | ROHM | 14+ | SOT323 |
BC807 PNP general purpose transistor
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.
PINNING
| PIN | DESCRIPTION |
| 1 | base |
| 2 | emitter |
| 3 | collector |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | −50 | V |
| VCEO | collector-emitter voltage | open base; IC = −10 mA | − | −45 | V |
| VEBO | emitter-base voltage | open collector | − | −5 | V |
| IC | collector current (DC) | − | −500 | mA | |
| ICM | peak collector current | − | −1 | A | |
| IBM | peak base current | − | −200 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 °C; note 1 | − | 250 | mW |
| Tstg | storage temperature | −65 | +150 | °C | |
| Tj | junction temperature | − | 150 | °C | |
| Tamb | operating ambient temperature | −65 | +150 | °C |
Note 1. Transistor mounted on an FR4 printed-circuit board.
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
BC807-25 Power Mosfet Transistor PNP general purpose transistor
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