STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET
Certification:new & original
Model Number:STP65NF06
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location:
Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details
STD65NF06
STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
General features
| Type | VDSS | RDS(on) | ID |
|---|---|---|---|
| STD65NF06 | 60V | <14mΩ | 60A |
| STP65NF06 | 60V | <14mΩ | 60A |
■ Standard level gate drive
■ 100% avalanche tested
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
■ Switching application
Absolute maximum ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage (VGS = 0) | 60 | V |
| VGS | Gate- source voltage | ± 20 | V |
| ID | Drain current (continuous) at TC = 25°C | 60 | A |
| ID | Drain current (continuous) at TC = 100°C | 42 | A |
| IDM(1) | Drain current (pulsed) | 240 | A |
| Ptot | Total dissipation at TC = 25°C | 110 | W |
| Derating Factor | 0.73 | W/°C | |
| dv/dt (2) | Peak diode recovery voltage slope | 10 | V/ns |
| EAS (3) | Single pulse avalanche energy | 390 | mJ |
| Tstg | Storage temperature | -55 to 175 | °C |
| Tj | Max. operating junction temperature |
1. Pulse width limited by safe operating area.
2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
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STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET
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