BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

Certification:new & original
Model Number:BCP54
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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BCP54 NPN General Purpose Amplifier


This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.


Absolute Maximum Ratings* TA = 25°C unless otherwise noted

SymbolParameterValueUnits
VCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage45V
VEBOEmitter-Base Voltage5.0V
ICCollector Current - Continuous1.5A
TJ, TstgOperating and Storage Junction Temperature Range-55 to +150°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.


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China BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors supplier

BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

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