IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

Certification:new & original
Model Number:IRFBC30
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

IRFBC30

N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET


TYPEVDSSRDS(on)ID
IRFBC30600 V< 2.2 Ω3.6 A

TO-220


■ TYPICAL RDS(on) = 1.8 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED


DESCRIPTION

The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.


APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER


ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
VDSDrain-source Voltage (VGS = 0)600V
VDGRDrain- gate Voltage (RGS = 20 kΩ)600V
VGSGate-source Voltage± 20V
IDDrain Current (continuous) at Tc = 25 ℃3.6A
IDDrain Current (continuous) at Tc = 100 ℃2.3A
IDM (•)Drain Current (pulsed)14A
PtotTotal Dissipation at Tc = 25 ℃75W
Derating Factor0.6W/℃
dv/dt(1)Peak Diode Recovery voltage slope3V/ns
TstgStorage Temperature-65 to 150
TjMax. Operating Junction Temperature150

(•) Pulse width limited by safe operating area

( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX


INTERNAL SCHEMATIC DIAGRAM


TO-220 MECHANICAL DATA


China IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET supplier

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

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