SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
Brand Name:Ti
Model Number:SI7139DP-T1-GE3
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
FEATURES
- TrenchFET® power MOSFETs
- Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY | ||
VDS (V) | RDS(on) () | ID (A) |
-60 | 0.0145 at VGS = -10 V | -14.4 |
0.0190 at VGS = -4.5 V | -12.6 | |
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | |||||
PARAMETER | SYMBOL | 10 s | STEADY STATE | UNIT | |
Drain-Source Voltage | VDS | -60 | V | ||
Gate-Source Voltage | VGS | ± 20 | |||
Continuous Drain Current (TJ = 150 °C) a | TA =25°C | ID | -14.4 | -8.6 | A |
TA =70°C | -11.5 | -6.9 | |||
Pulsed Drain Current | IDM | -60 | |||
Continuous Source Current (Diode Conduction) a | IS | -4.5 | -1.6 | ||
Avalanche Current | L = 0.1 mH | IAS | 50 | ||
Single Pulse Avalanche Energy | EAS | 125 | mJ | ||
Maximum Power Dissipation a | TA =25°C | PD | 5.4 | 1.9 | W |
TA =70°C | 3.4 | 1.2 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C | ||
Soldering Recommendations (Peak Temperature) b, c | 260 | ||||
THERMAL RESISTANCE RATINGS | |||||
PARAMETER | SYMBOL | TYPICAL | MAXIMUM | UNIT | |
Maximum Junction-to-Ambient a | t 10 s | RthJA | 18 | 23 | °C/W |
Steady State | 52 | 65 | |||
Maximum Junction-to-Case (Drain) | Steady State | RthJC | 1 | 1.3 | |
SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
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