CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET
Brand Name:Ti
Model Number:CSD18501Q5A
Minimum Order Quantity:Contact us
Delivery Time:The goods will be shipped within 3 days once received fund
Payment Terms:Paypal, Western Union, TT
Price:Contact us
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Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details
CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET
1 Features
- Ultra low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
2 Applications
DC-DC Conversion
Secondary Side Synchronous Rectifier
Battery Motor Control
3 Description
This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFETTM power MOSFET has been designed to minimize losses in power conversion applications.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-Source Voltage | 40 | V | |
Qg | Gate Charge Total (4.5 V) | 20 | nC | |
Qgd | Gate Charge Gate-to-Drain | 5.9 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 3.3 | mΩ |
VGS =10V | 2.5 | mΩ | ||
VGS(th) | Threshold Voltage | 1.8 | V | |
Ordering Information(1)
Device | Qty | Media | Package | Ship |
CSD18501Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18501Q5AT | 250 | 7-Inch Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 161 | ||
Continuous Drain Current (1) | 22 | A | |
IDM | Pulsed Drain Current (2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 150 | ||
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID =68A,L=0.1mH,RG =25Ω | 231 | mJ |
CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET
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