CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs
Brand Name:Ti
Model Number:CSD17556Q5B
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Delivery Time:The goods will be shipped within 3 days once received fund
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Shenzhen China
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details
CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs
1 Features
- Extremely Low Resistance
Ultra-Low Qg and Qgd
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
2 Applications
Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications
3 Description
This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 30 | nC | |
Qgd | Gate Charge Gate-to-Drain | 7.5 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 1.5 | mΩ |
VGS =10V | 1.2 | |||
VGS(th) | Threshold Voltage | 1.4 | V | |
Device Information
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
CSD17556Q5B | 2500 | 13-Inch Reel | SON 5.00-mm × 6.00-mm Plastic Package | Tape and Reel |
CSD17556Q5BT | 250 |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 215 | ||
Continuous Drain Current(1) | 34 | ||
IDM | Pulsed Drain Current, TA = 25°C(1)(2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 191 | ||
TJ, Tstg | Operating Junction, Storage Temperature | –55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID =100A,L=0.1mH,RG =25Ω | 500 | mJ |
CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs
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