FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

Brand Name:Ti
Model Number:FDMS3662
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Delivery Time:The goods will be shipped within 3 days once received fund
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench


Features

  • Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
  • Advanced Package and Silicon combination for low rDS(on)
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.


Application

  • DC - DC Conversion

China FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench supplier

FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

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