FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate

Brand Name:Ti
Model Number:FDMS86181
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

FDMS86181 Mosfet Power Transistor MOSFET 100V/20V N-Chnl Power Trench MOSFET


Features

  • Shielded Gate MOSFET Technology
  • MaxrDS(on) =4.2mΩat VGS =10V,ID =44A
  • MaxrDS(on) =12mΩat VGS =6V,ID =22A
  • ADD
  • 50%
  • lower Qrr than other MOSFET suppliers Lowers switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

General Description

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.


Applications

  • Primary DC-DC MOSFET
  • Synchronous Rectifier in DC-DC and AC-DC Motor Drive
  • Solar

China FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate supplier

FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate

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