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CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET
1 Features
Low Thermal Resistance
Low RDS(on)
Pb and Halogen Free
RoHS Compliant
SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
DC-DC Converters
Battery Management
Load Switch
Battery Protection
3 Description
This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-source voltage | –20 | V | |
Qg | Gate charge total (–4.5 V) | 7.5 | nC | |
Qgd | Gate charge gate to drain | 1.1 | nC | |
RDS(on) | Drain-to-source on resistance | VGS = –1.8 V | 74 | mΩ |
VGS = –2.5 V | 13.3 | mΩ | ||
VGS = –4.5 V | 7.7 | mΩ | ||
Vth | Threshold voltage | –0.9 | V |
Ordering Information(1)
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
CSD25402Q3A | 2500 | 13-Inch Reel | SON 3.3 mm × 3.3 mm Plastic Package | Tape and Reel |
CSD25402Q3AT | 250 | 7-Inch Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-source voltage | –20 | V |
VGS | Gate-to-source voltage | +12 or –12 | V |
ID | Continuous drain current, TC = 25°C | –76 | A |
Continuous drain current (package limit) | –35 | A | |
Continuous drain current(1) | –15 | A | |
IDM | Pulsed drain current(2) | –148 | A |
PD | Power dissipation(1) | 2.8 | W |
Power dissipation, TC = 25°C | 69 | ||
TJ | Operating junction temperature | –55 to 150 | °C |
Tstg | Storage temperature | –55 to 150 | °C |