2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor
Brand Name:TI
Model Number:2N7002LT1G
Minimum Order Quantity:Contact us
Delivery Time:The goods will be shipped within 3 days once received fund
Payment Terms:Paypal, Western Union, TT
Price:Contact us
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Location:
Shenzhen China
Address:
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details
2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating | Symbol | Value | Unit |
Drain−Source Voltage | VDSS | 60 | Vdc |
Drain−Gate Voltage (RGS = 1.0 MW) | VDGR | 60 | Vdc |
Drain Current | ID ID IDM | ± 115 ± 75 ± 800 | mAdc |
Gate−Source Voltage | VGS VGSM | ± 20 ± 40 | Vdc Vpk |
THERMAL CHARACTERISTICS
Characteristic | Symbol | Max | Unit |
Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Thermal Resistance, Junction−to−Ambient | PD RqJA | 225 1.8 556 | mW mW/°C °C/W |
Total Device Dissipation Thermal Resistance, Junction−to−Ambient | PD RqJA | 300 2.4 417 | mW mW/°C °C/W |
Junction and Storage Temperature | TJ, Tstg | − 55 to +150 | °C |
2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor
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