RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N

Brand Name:ROHM Semiconductor
Model Number:RGS80TS65HRC11
Minimum Order Quantity:50pcs
Price:Negotiable
Supply Ability:1000000pcs
Voltage - Collector Emitter Breakdown (Max):650 V
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Location: Shenzhen China
Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen
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RGS80TS65HRC11 IGBT Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

FEATURES

  • Class-leading low conduction loss
  • High efficiency
  • Reduce size
  • Available in both 1200V and 600V ratings
  • Utilize trench-gate and thin-wafer technologies
  • Offer low collector-emitter saturation voltage
  • Reduced switching losses
  • Increase the energy savings
  • AEC-Q101 qualified
  • TO-247N package

APPLICATIONS

  • General inverter for automotive and industrial use
  • Positive Temperature Coefficient (PTC) heater
  • Electric compressors

PERFORMANCE GRAPHS

China RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N supplier

RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N

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