IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
Brand Name:IXYS
Model Number:IXYK110N120A4
Minimum Order Quantity:50pcs
Price:Negotiable
Supply Ability:1000000pcs
Voltage - Collector Emitter Breakdown (Max):1200 V
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Shenzhen China
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Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen
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Product Details
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Product Details
IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK)
IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs
IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.These through-hole IGBTs also offer square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 1200V, making them ideal for snubber-less hard-switching applications. The ultra low-Vsat IGBT provides up to 5kHz switching. The IXYS XPT 4th Generation Trench IGBTs include a positive collector-to-emitter voltage temperature coefficient. This allows designers to use multiple devices in parallel to meet high current requirements and low gate charges, which help reduce gate drive requirements and switching losses.
Typical applications include battery chargers, lamp ballasts, motor drives, power inverters, Power Factor Correction (PFC) circuits, switch-mode power supplies, Uninterruptible Power Supplies (UPS), and welding machines.
FEATURES
- Developed using proprietory XPT thin-wafer technology and state-of-the-art 4th generation (GenX4™) trench IGBT process
- Low on-state voltages - VCE(sat)
- Up to 5kHz switching
- Positive thermal coefficient of VCE(sat)
- Optimized for high-speed switching (up to 60kHz)
- Short circuit capability (10µs)
- Square RBSOA
- Ultra-fast anti-parallel diodes (Sonic-FRD™)
- Hard-switching capabilities
- High power densities
- Temperature stability of diode forward voltage VF
- Low gate drive requirements
- International standard packages
APPLICATIONS
- Battery chargers
- Lamp ballasts
- Motor drives
- Power inverters
- PFC circuits
- Switch-mode power supplies
- UPS
- Welding machines
SPECIFICATIONS
- Common
- 1200V VCES
- 20A IC110
- IXYA20N120A4HV
- ≤1.9V VCE(sat)
- 160ns tfi(typ)
- IXYA20N120B4HV
- ≤2.1V VCE(sat)
- 90ns tfi(typ)
- IXYA20N120C4HV
- ≤2.5V VCE(sat)
- 58ns tfi(typ)
IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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