TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV
Brand Name:IXYS
Model Number:IXBT14N300HV
Minimum Order Quantity:50pcs
Price:Negotiable
Supply Ability:1000000pcs
Voltage - Collector Emitter Breakdown (Max):3000 V
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Product Details
IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT)
IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs
IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of the IXBx14N300HV BiMOSFET IGBTs serve as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.Using the IXBx14N300HV BiMOSFET IGBTs, power designers can eliminate multiple series-parallel lower voltage, lower current rated devices, thereby reducing the number of power components required and simplifying associated gate drive circuitry. This feature results in a much simpler system design with a lower cost and improved reliability.
The IXYS IXBx14N300HV BiMOSFET™ IGBTs are available in TO-263HV (IXBA14N300HV) and TO-268HV (IXBT14N300HV) packages. These devices feature a -55°C to +150°C junction temperature range.
FEATURES
- "Free" intrinsic body diode
- Saves space by eliminating multiple series-parallel lower voltage, lower current rated devices
- High power density
- High-frequency operation
- Low conduction losses
- MOS gate turn on for drive simplicity
- 4000V electrical isolation
- Low gate drive requirements
APPLICATIONS
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
- AC switches
SPECIFICATIONS
- 3000V collector-emitter voltage (VCES)
- 3000V collector-gate voltage (VCGR)
- ±20V gate-emitter voltage (VGES)
- ±38A collector current at +25°C (IC25)
- ±100nA gate leakage current (IGES)
- ±14A collector current at +110°C (IC110)
- 2.7V collector-emitter saturation voltage (VCE(sat))
- 10μs short-circuit-withstand time (tsc)
- 200W collector power dissipation (PC)
- -55°C to +150°C junction temperature range
PIN DESIGNATIONS & SCHEMATIC
TO-263HV PACKAGE OUTLINE
TO-268HV PACKAGE OUTLINE
TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV
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