FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L
Brand Name:onsemi
Model Number:FGH4L40T120LQD
Minimum Order Quantity:50pcs
Price:Negotiable
Supply Ability:1000000pcs
Voltage - Collector Emitter Breakdown (Max):1200 V
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Product Details
FGH4L40T120LQD IGBT Trench Field Stop 1200 V 80 A 306 W Through Hole TO-247-4L
onsemi FGH4L40T120LQD IGBT
onsemi FGH4L40T120LQD IGBT is a robust Ultra Field Stop Trench construction that provides superior performance in demanding switching applications. This IGBT is incorporated into the device which is a soft and fast co-packaged free-wheeling diode with a low forward voltage. The FGH4L40T120LQD IGBT offers both low on-state voltage and minimal switching loss. This IGBT operates at 175°C maximum junction temperature. The FGH4L40T120LQD IGBT operates at 1200V, 40A, and is built in a TO247 4L package. Typical applications include solar inverters and UPS, industrial switching, and welding.
FEATURES
- Extremely efficient trench with field stop technology
- 175°C maximum junction temperature (TJ)
- Fast and soft reverse recovery diode
- Optimized for Low VCE(Sat)
- 1200V maximum Collector-Emitter Voltage (VCE)
APPLICATIONS
- Solar inverter and UPS
- Industrial switching
- Welding
PIN CONNECTION
GATE CHARGE CHARACTERISTICS
FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L
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