GE IS200EHPAG1DAB Gate Pulse Amplifier

Brand Name:GE
Model Number:IS200EHPAG1DAB
Minimum Order Quantity:1pc
Delivery Time:5-7days
Payment Terms:T/T
Place of Origin:US
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Location: Xiamen Fujian China
Address: 1602, No.1 Plaza, No.2 Lujiang Road, Siming District, Xiamen Fujian China
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GE IS200EHPAG1DAB Gate Pulse Amplifier


Product Details:


The GE IS200EHPAG1DAB is an Exciter Gate Pulse Amplifier Board, a critical component in GE’s EX2100 Series Excitation Control Systems, designed for 100 mm EX2100™ excitation setups. It processes gate commands from the ESEL module to control the firing of up to six Silicon Controlled Rectifiers in the Power Bridge, while serving as a monitoring interface for current conduction, bridge airflow, and temperature. Powered by 125V DC from the EPDM with an onboard DC/DC converter, it ensures stable SCR gating across input voltage ranges, with LEDs providing visual status for power, commands, faults, and sensor inputs.


Features:
SCR Control: Processes six differential gate commands from ESEL, using dedicated amplifiers for each SCR with optical and galvanic isolation to ensure independent, reliable operation.


Monitoring Capabilities: Interfaces with Hall Effect sensors to monitor three-phase bridge currents; tracks bridge temperature via RTD/thermistor or temperature switches through J13.


Cooling Oversight: Detects fan airflow loss via J12, supporting pulsed or dry-contact inputs configurable via jumper JP2.


Status Feedback: LEDs indicate power health, gate commands, SCR outputs, faults, and sensor alarms for quick diagnostics.


Industrial Integration: Seamlessly fits EX2100 architectures, with shielded cables and robust connectors ensuring signal integrity in excitation control environments.


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GE IS200EHPAG1DAB Gate Pulse Amplifier

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