Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory

Brand Name:original
Certification:ROHS COMPLIANT
Model Number:FM1608-120
Minimum Order Quantity:Minimum Order Quantity: 10 PCS
Delivery Time:Within 3days
Payment Terms:T/T in advance, Western Union, Xtransfer
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Location: Shenzhen China
Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen
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FM1608-120 - RAMTRON INTERNATIONAL CORPORATION - 64KB BYTEWIDE FRAM MEMORY


Quick Detail:


64Kb Bytewide FRAM Memory


Description:


The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is

nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make it superior to other types of nonvolatile memory.

In-system operation of the FM1608 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1608 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and

batteries or hybrid memory solutions.

These capabilities make the FM1608 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1608 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.


Applications:


64K bit Ferroelectric Nonvolatile RAM

· Organized as 8,192 x 8 bits

· High endurance 10 Billion (1010) read/writes

· 10 year data retention at 85° C

· NoDelay™ write

· Advanced high-reliability ferroelectric process

Superior to BBSRAM Modules

· No battery concerns

· Monolithic reliability

· True surface mount solution, no rework steps

· Superior for moisture, shock, and vibration

· Resistant to negative voltage undershoots

SRAM & EEPROM Compatible

· JEDEC 8Kx8 SRAM & EEPROM pinout

· 120 ns access time

· 180 ns cycle time

· Equal access & cycle time for reads and writes

Low Power Operation

· 15 mA active current

· 20 mA standby current

Industry Standard Configuration

· Industrial temperature -40° C to +85° C

· 28-pin SOP or DIP


Specifications:


part no.FM1608
ManufacturerRamtron International Corporation
supply ability10000
datecode10+
package28-pin SOP or DIP
remarknew and original stock
China Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory supplier

Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory

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