High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF
Certification:IEC
Model Number:BLF174XR
Minimum Order Quantity:1 piece
Delivery Time:1-2 working days
Payment Terms:T/T, Western Union, Paypal
Place of Origin:USA
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Site Member
Location:
Shenzhen Guangdong China
Address:
C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Supplier`s last login times:
within 48 hours
Product Details
Company Profile
Product Details
BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A
600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
Feature
1, Easy power control
2, Integrated ESD protection
3, Excellent ruggedness
4, High efficiency
5, Excellent thermal stability
6, Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Application
Industrial, scientific and medical applications
Broadcast transmitter applications
| Transistor Type | LDMOS (Dual), Common Source | |
|---|---|---|
| Frequency | 108MHz | |
| Gain | 28.5dB | |
| Voltage - Test | 50V | |
| Current Rating | - | |
| Noise Figure | - | |
| Current - Test | 100mA | |
| Power - Output | 600W | |
| Voltage - Rated | 110V | |
| Package / Case | SOT-1214A | |
| Supplier Device Package | SOT1214A |
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High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF
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