RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
Brand Name:Mitsubishi
Certification:CE
Model Number:RD06HVF1
Minimum Order Quantity:50 pieces
Delivery Time:1-2 working days
Payment Terms:T/T, Western Union, Paypal
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Location:
Shenzhen Guangdong China
Address:
C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Supplier`s last login times:
within 48 hours
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Product Details
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications
Description of RD06HVF1
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications
FEATURES of RD06HVF1
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION of RD06HVF1
For output stage of high power amplifiers in VHF band mobile radio sets.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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