IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

Brand Name:VISHAY
Model Number:IRF9640
Minimum Order Quantity:10 PCS
Delivery Time:STOCK
Payment Terms:T/T, Western Union , ESCROW
Place of Origin:CHINA
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Location: Shenzhen Guangdong China
Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
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Product Details

IRF9640 General Purpose Rectifier Diode P-Channel 200V 11A (Tc) 125W (Tc) Through Hole


FEATURES


• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC


DESCRIPTION


Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
 Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Series-
PackagingTube
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB


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China IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W supplier

IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

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